Magnetic induction plasma source for semiconductor processes and equipment

ABSTRACT

Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

TECHNICAL FIELD

The present technology relates to semiconductor processes and equipment.More specifically, the present technology relates to magnetic inductionplasma sources for semiconductor processes and equipment.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forremoval of exposed material. Chemical etching is used for a variety ofpurposes including transferring a pattern in photoresist into underlyinglayers, thinning layers, or thinning lateral dimensions of featuresalready present on the surface. Often it is desirable to have an etchprocess that etches one material faster than another, facilitating, forexample, a pattern transfer process. Such an etch process is said to beselective to the first material. As a result of the diversity ofmaterials, circuits, and processes, etch processes have been developedwith a selectivity towards a variety of materials.

Etch processes may be termed wet or dry based on the materials used inthe process. A wet HF etch preferentially removes silicon oxide overother dielectrics and materials. However, wet processes may havedifficulty penetrating some constrained trenches and also may sometimesdeform the remaining material. Dry etches produced in local plasmasformed within the substrate processing region can penetrate moreconstrained trenches and exhibit less deformation of delicate remainingstructures. However, local plasmas may damage the substrate through theproduction of electric arcs as they discharge.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Exemplary systems for generating plasma products may include magneticinduction plasma systems. The magnetic induction plasma system mayinclude a first plasma source. The first plasma source may include oneor more first sections and one or more second sections. The one or morefirst sections and the one or more second sections may be fluidlycoupled with each other such that at least a portion of plasma productsgenerated inside the first plasma source may circulate through at leastone of the one or more first sections. At least a portion of the plasmaproducts generated inside the second plasma source may also circulatethrough at least one of the one or more second sections inside the firstplasma source. Each of the one or more second sections may include adielectric material. The one or more first sections and the one or moresecond sections may be arranged in an alternating manner such that theone or more first sections may be electrically insulated from each otherat least in part by the one or more second sections.

In some embodiments, the magnetic plasma induction system may furtherinclude one or more first magnetic elements. Each of the one or morefirst magnetic elements may define a closed loop and may be positionedaround one of the one or more second sections. The first plasma sourcemay define a first toroidal shape. The first toroidal shape may includea first toroidal extension and a first toroidal axis perpendicular tothe first toroidal extension. Each of the one or more first sections mayinclude a first dimension parallel to the first toroidal axis. Each ofthe one or more second sections may include a second dimension parallelto the first toroidal axis. The first dimension may be greater than thesecond dimension such that the one or more second sections may defineone or more recesses. Each of the one or more recesses may be configuredto receive at least a portion of one of the one or more first magneticelements.

In some embodiments, each of the one or more first sections may includea first opening and a second opening. Each of the one or more firstsections and the corresponding first and second openings may define aflow passage parallel to the first toroidal axis such that a precursorfor generating the plasma products inside the first plasma source may beflowed into each first section through the first opening and at least aportion of the plasma products generated may be flowed out of each firstsection through the second opening.

In some embodiments, the magnetic induction plasma system may furtherinclude one or more first dielectric ring members and one or more seconddielectric ring members. The one or more first dielectric ring membersmay be positioned above the first openings, and the one or more seconddielectric ring members may be positioned below the second openings suchthat the one or more first sections may be electrically insulated fromeach other when the magnetic induction plasma system may be integratedinto a semiconductor processing chamber and may be positioned betweenmetal components of the semiconductor processing chamber along the firsttoroidal axis.

In some embodiments, the semiconductor processing chamber may include agas inlet assembly and a gas distribution assembly. The gas inletassembly may be positioned upstream of the magnetic induction plasmasystem. The gas distribution assembly may be positioned downstream ofthe magnetic induction plasma system. The one or more first dielectricring members may define a first planar supporting surface and may beconfigured to support the gas inlet assembly. The one or more seconddielectric ring members may define a second planar supporting surfaceand may be configured to be supported by the gas distribution assembly.

In some embodiments, each of the one or more first sections may includean arcuate tubular body. In some embodiments, each of the one or moresecond sections may include a pair of flanges configured at two oppositeends of each second section and may be configured to couple each secondsection with two adjacent first sections. In some embodiments, each ofthe one or more first sections may include a first extension along thefirst toroidal extension. Each of the one or more second sections mayinclude a second extension along the first toroidal extension. A ratioof the first extension to the second extension may be between about 10:1and about 2:1 such that circulation of at least a portion of plasmaproducts inside the first plasma source may be facilitated.

In some embodiments, the magnetic induction plasma system may furtherinclude a second plasma source. The second plasma source may define asecond toroidal shape. The second toroidal shape may include a secondtoroidal extension and a second toroidal axis perpendicular to thesecond toroidal extension. The second toroidal axis may be aligned withthe first toroidal axis. The second plasma source may be positionedradially inward from the first plasma source. The second plasma sourcemay include a third section and a fourth section. At least one of thethird section or the fourth section may include a dielectric material.The second plasma source may further include at least one secondmagnetic element. The at least one second magnetic element may define aclosed loop and may be positioned around at least one of the thirdsection or the fourth section. In some embodiments, the at least onesecond magnetic element may be positioned at an azimuthal angledifferent from an azimuthal angle of each of the one or more firstmagnetic elements such that interference between an electric fieldgenerated by each of the one or more first magnetic elements and anelectric field generated by the at least one second magnetic element maybe reduced.

In some embodiments, the first plasma source and the second plasmasource may be configured such that the plasma products exiting the firstplasma source may diffuse onto a first region of a substrate, and theplasma products exiting the second plasma source may diffuse onto asecond region of the substrate. The first region may define asubstantially annular shape. The second region may define asubstantially circular shape. The first region and the second region mayoverlap.

In some embodiments, the magnetic induction plasma system may furtherinclude one or more electrically coupled first coils and a second coil.Each of the one or more electrically coupled first coils may beconfigured around at least a portion of each of the one or more firstmagnetic elements. The second coil may be configured around at least aportion of the at least one second magnetic element. The magneticinduction plasma system may be driven by an LLC resonant half bridgecircuit. The LLC resonant half bridge circuit may be configured tosupply a first current to the one or more electrically coupled firstcoils at a first frequency. The LLC resonant half bridge circuit may beconfigured to supply a second current to the second coil at a secondfrequency. The first frequency may match the second frequency. In someembodiments, the LLC resonant half bridge circuit may be configured tosupply the first current and the second current at a frequency betweenabout 100 kHz and about 20 MHz. In some embodiments, the LLC resonanthalf bridge circuit may be configured to supply a first power to the oneor more electrically coupled first coils and to supply a second power tothe second coil. The first power may be greater than the second power.

The present technology may also include methods of generating plasmaproducts. The methods may include flowing a precursor into a plasmasource. The methods may further include forming a plasma from theprecursor to produce plasma products. The plasma source may define afirst toroidal shape. The first toroidal shape may include a firsttoroidal extension and a first toroidal axis perpendicular to the firsttoroidal extension. The plasma source may include one or more firstsections and one or more second sections. The one or more first sectionsand the one or more second sections may be fluidly coupled with eachother along the first toroidal extension such that a first portion ofthe plasma products may circulate through at least one of the one ormore first sections substantially along the first toroidal extensioninside the plasma source. The first portion of the plasma products mayfurther circulate through at least one of the one or more secondsections substantially along the first toroidal extension inside theplasma source. Each of the one or more second sections may include adielectric material. The one or more first sections and the one or moresecond sections may be arranged in an alternating manner such that theone or more first sections may be electrically insulated from each otherat least in part by the one or more second sections.

In some embodiments, the plasma source may further include one or morefirst magnetic elements. Each of the one or more first magnetic elementsmay define a closed loop and may be positioned around one of the one ormore second sections. Each of the one or more first sections may includea first dimension parallel to the first toroidal axis. Each of the oneor more second sections may include a second dimension parallel to thefirst toroidal axis. The first dimension may be greater than the seconddimension such that the one or more second sections may define one ormore recesses. Each of the one or more recesses may be configured toreceive at least a portion of one of the one or more first magneticelements.

In some embodiments, the method for generating plasma products mayfurther include maintaining a pressure within the plasma source betweenabout 1 mTorr and about 500 Torr. In some embodiments, the plasma sourcemay further include one or more electrically coupled coils. Each of theone or more electrically coupled coils may be configured around at leasta portion of each of the one or more first magnetic elements. In someembodiments, the method may further include supplying a current to theone or more electrically coupled coils by an LLC resonant half bridgecircuit at a frequency between about 100 kHz and about 20 MHz. In someembodiments, the method may further include supplying a power betweenabout 100 W and about 1,000 W by the LLC resonant half bridge circuit tothe one or more electrically coupled coils for generating products fromthe precursor inside the plasma source.

The present technology may also include a semiconductor processingchamber including a magnetic induction plasma system. The magneticinduction plasma system may include a first plasma source having a firsttoroidal shape. The first plasma source may define a first annularrecess of the first toroidal shape. The magnetic induction plasma systemmay further include a first magnetic element. The first magnetic elementmay form a closed loop and may be positioned around a portion of thefirst plasma source. At least a portion of the first magnetic elementmay be received within the first annular recess. In some embodiments,the first plasma source may include a first inlet for a precursor forgenerating plasma products therefrom inside the first plasma source. Thefirst plasma source may further include a first outlet for the plasmaproducts generated. The first inlet, the first outlet, and the firstplasma source may include a common width dimension measured along aradial direction of the first toroidal shape.

In some embodiments, the magnetic induction plasma system may furtherinclude a second plasma source having a second toroidal shape. Thesecond plasma source and the first plasma source may have a commontoroidal axis. The second plasma source may be positioned radiallyinward from the first plasma source. The second plasma source may definea second annular recess of the second toroidal shape. The magneticinduction plasma system may further include a second magnetic element.The second magnetic element may form a closed loop and may be positionedaround a portion of the second plasma source. At least a portion of thesecond magnetic element may be received within the second annularrecess. The second plasma source may include a second inlet for theprecursor for generating plasma products therefrom inside the secondplasma source and a second outlet for the plasma products generated. Thesecond inlet, the second outlet, and the second plasma source may have acommon width dimension measured along a radial direction of the secondtoroidal shape. The first magnetic element may be positioned at a firstazimuthal angle. The second magnetic element may be positioned at asecond azimuthal angle. The first azimuthal angle may be different fromthe second azimuthal angle.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, the magnetic induction plasma systemsdescribed herein may allow for low driving power, and may yield highpower transfer efficiency. Additionally, the driving power, frequency,and current may be fully adjustable to allow for modulation of thecomposition and property of the plasma generated. Moreover, the magneticinduction plasma systems may operate to generate a plasma at a wideoperational pressure ranging from several tens of mTorr to severalhundred Torr. These and other embodiments, along with many of theiradvantages and features, are described in more detail in conjunctionwith the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of one embodiment of an exemplaryprocessing system according to embodiments of the present technology.

FIG. 2A shows a schematic cross-sectional view of an exemplaryprocessing chamber according to embodiments of the present technology.

FIG. 2B shows a detailed view of a portion of the processing chamberillustrated in FIG. 2A according to embodiments of the presenttechnology.

FIG. 3 shows schematic views of exemplary showerhead configurationsaccording to embodiments of the present technology.

FIGS. 4A-4F show schematic views of an exemplary plasma system accordingto embodiments of the present technology.

FIGS. 5A-5C show schematic views of an exemplary plasma system accordingto embodiments of the present technology.

FIGS. 6A-6C show schematic views of an exemplary plasma system accordingto embodiments of the present technology.

FIGS. 7A-7C show schematic views of an exemplary plasma system inoperation according to embodiments of the present technology.

FIGS. 8A-8C show schematic views of an exemplary plasma system inoperation according to embodiments of the present technology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

Conventional plasma generating systems may typically utilize a fullbridge circuit driving scheme, which can consume a large amount of powerdue to power loss in the driving circuitry and can be very costly tooperate. Additionally, conventional plasma generating systems driven bya full bridge circuit may generally require high power of 10,000 W orhigher to generate and sustain a plasma.

The various embodiments of the magnetic induction plasma systemsdescribed herein may utilize a particularly configured LLC resonant halfbridge circuit driving scheme. The LLC resonant half bridge circuit maygenerally be more reliable and cost effective as compared to theconventional full bridge circuit for plasma generation. The LLC resonanthalf bridge circuit may also yield higher power transfer efficiency, ascompared to a conventional plasma generating system using a full bridgecircuit driving scheme. In a conventional plasma generating system usinga full bridge circuit driving scheme, energy loss on the driving circuitmay be significant. The magnetic induction plasma systems describedherein may yield greater energy transfer efficiency from the powersource to the plasma given that the LLC resonant half bridge circuitdriving scheme may require significantly lower power to ignite and/orsustain the plasma while yielding similar dissociation of the precursorgases. Further, the magnetic induction plasma systems described hereinmay allow for power adjustment from 0 W to about 1,000 W or higher. Byadjusting the power output, the dissociation rate of the precursor gasesmay be modulated to achieve a desired composition of the plasmaproducts. The magnetic induction plasma systems described herein mayfurther allow for a wide operational frequency range from several tenkHz to several dozen MHz or more, and a wide operational pressure rangefrom dozens of mTorr to several hundred Torr or more, under which astable plasma may be generated and sustained.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. In the figure, a pair of front opening unified pods (FOUPs)102 supply substrates of a variety of sizes that are received by roboticarms 104 and placed into a low pressure holding area 106 before beingplaced into one of the substrate processing chambers 108 a-f, positionedin tandem sections 109 a-c. A second robotic arm 110 may be used totransport the substrate wafers from the holding area 106 to thesubstrate processing chambers 108 a-f and back. Each substrateprocessing chamber 108 a-f, can be outfitted to perform a number ofsubstrate processing operations including the dry etch processesdescribed herein in addition to cyclical layer deposition (CLD), atomiclayer deposition (ALD), chemical vapor deposition (CVD), physical vapordeposition (PVD), etch, pre-clean, degas, orientation, and othersubstrate processes.

The substrate processing chambers 108 a-f may include one or more systemcomponents for depositing, annealing, curing and/or etching a dielectricor metallic film on the substrate wafer. In one configuration, two pairsof the processing chambers, e.g., 108 c-d and 108 e-f, may be used todeposit material on the substrate, and the third pair of processingchambers, e.g., 108 a-b, may be used to etch the deposited material. Inanother configuration, all three pairs of chambers, e.g., 108 a-f, maybe configured to etch a dielectric or metallic film on the substrate.Any one or more of the processes described may be carried out inchamber(s) separated from the fabrication system shown in differentembodiments. It will be appreciated that additional configurations ofdeposition, etching, annealing, and curing chambers for dielectric filmsare contemplated by system 100.

FIG. 2A shows a cross-sectional view of an exemplary process chambersystem 200 with partitioned plasma generation regions within theprocessing chamber. During film etching, e.g., titanium nitride,tantalum nitride, tungsten, copper, cobalt, silicon, polysilicon,silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide,etc., a process gas may be flowed into the first plasma region 215through a gas inlet assembly 205. A remote plasma system (RPS) 201 mayoptionally be included in the system, and may process a first gas whichthen travels through gas inlet assembly 205. The inlet assembly 205 mayinclude two or more distinct gas supply channels where the secondchannel (not shown) may bypass the RPS 201, if included.

A cooling plate 203, faceplate 217, ion suppressor 223, showerhead 225,and a substrate support 265, having a substrate 255 disposed thereon,are shown and may each be included according to embodiments. Thepedestal 265 may have a heat exchange channel through which a heatexchange fluid flows to control the temperature of the substrate, whichmay be operated to heat and/or cool the substrate or wafer duringprocessing operations. The wafer support platter of the pedestal 265,which may comprise aluminum, ceramic, or a combination thereof, may alsobe resistively heated in order to achieve relatively high temperatures,such as from up to or about 100° C. to above or about 600° C., using anembedded resistive heater element.

The faceplate 217 may be pyramidal, conical, or of another similarstructure with a narrow top portion expanding to a wide bottom portion.The faceplate 217 may additionally be flat as shown and include aplurality of through-channels used to distribute process gases. Plasmagenerating gases and/or plasma excited species, depending on use of theRPS 201, may pass through a plurality of holes, shown in FIG. 2B, infaceplate 217 for a more uniform delivery into the first plasma region215.

Exemplary configurations may include having the gas inlet assembly 205open into a gas supply region 258 partitioned from the first plasmaregion 215 by faceplate 217 so that the gases/species flow through theholes in the faceplate 217 into the first plasma region 215. Structuraland operational features may be selected to prevent significant backflowof plasma from the first plasma region 215 back into the supply region258, gas inlet assembly 205, and fluid supply system 210. The faceplate217, or a conductive top portion of the chamber, and showerhead 225 areshown with an insulating ring 220 located between the features, whichallows an AC potential to be applied to the faceplate 217 relative toshowerhead 225 and/or ion suppressor 223. The insulating ring 220 may bepositioned between the faceplate 217 and the showerhead 225 and/or ionsuppressor 223 enabling a capacitively coupled plasma (CCP) to be formedin the first plasma region. A baffle (not shown) may additionally belocated in the first plasma region 215, or otherwise coupled with gasinlet assembly 205, to affect the flow of fluid into the region throughgas inlet assembly 205.

The ion suppressor 223 may comprise a plate or other geometry thatdefines a plurality of apertures throughout the structure that areconfigured to suppress the migration of ionically-charged species out ofthe first plasma region 215 while allowing uncharged neutral or radicalspecies to pass through the ion suppressor 223 into an activated gasdelivery region between the suppressor and the showerhead. Inembodiments, the ion suppressor 223 may comprise a perforated plate witha variety of aperture configurations. These uncharged species mayinclude highly reactive species that are transported with less reactivecarrier gas through the apertures. As noted above, the migration ofionic species through the holes may be reduced, and in some instancescompletely suppressed. Controlling the amount of ionic species passingthrough the ion suppressor 223 may advantageously provide increasedcontrol over the gas mixture brought into contact with the underlyingwafer substrate, which in turn may increase control of the depositionand/or etch characteristics of the gas mixture. For example, adjustmentsin the ion concentration of the gas mixture can significantly alter itsetch selectivity, e.g., SiNx:SiOx etch ratios, Si:SiOx etch ratios, etc.In alternative embodiments in which deposition is performed, it can alsoshift the balance of conformal-to-flowable style depositions fordielectric materials.

The plurality of apertures in the ion suppressor 223 may be configuredto control the passage of the activated gas, i.e., the ionic, radical,and/or neutral species, through the ion suppressor 223. For example, theaspect ratio of the holes, or the hole diameter to length, and/or thegeometry of the holes may be controlled so that the flow ofionically-charged species in the activated gas passing through the ionsuppressor 223 is reduced. The holes in the ion suppressor 223 mayinclude a tapered portion that faces the plasma excitation region 215,and a cylindrical portion that faces the showerhead 225. The cylindricalportion may be shaped and dimensioned to control the flow of ionicspecies passing to the showerhead 225. An adjustable electrical bias mayalso be applied to the ion suppressor 223 as an additional means tocontrol the flow of ionic species through the suppressor.

The ion suppressor 223 may function to reduce or eliminate the amount ofionically charged species traveling from the plasma generation region tothe substrate. Uncharged neutral and radical species may still passthrough the openings in the ion suppressor to react with the substrate.It should be noted that the complete elimination of ionically chargedspecies in the reaction region surrounding the substrate may not beperformed in embodiments. In certain instances, ionic species areintended to reach the substrate in order to perform the etch and/ordeposition process. In these instances, the ion suppressor may help tocontrol the concentration of ionic species in the reaction region at alevel that assists the process.

Showerhead 225 in combination with ion suppressor 223 may allow a plasmapresent in first plasma region 215 to avoid directly exciting gases insubstrate processing region 233, while still allowing excited species totravel from chamber plasma region 215 into substrate processing region233. In this way, the chamber may be configured to prevent the plasmafrom contacting a substrate 255 being etched. This may advantageouslyprotect a variety of intricate structures and films patterned on thesubstrate, which may be damaged, dislocated, or otherwise warped ifdirectly contacted by a generated plasma. Additionally, when plasma isallowed to contact the substrate or approach the substrate level, therate at which oxide species etch may increase. Accordingly, if anexposed region of material is oxide, this material may be furtherprotected by maintaining the plasma remotely from the substrate.

The processing system may further include a power supply 240electrically coupled with the processing chamber to provide electricpower to the faceplate 217, ion suppressor 223, showerhead 225, and/orpedestal 265 to generate a plasma in the first plasma region 215 orprocessing region 233. The power supply may be configured to deliver anadjustable amount of power to the chamber depending on the processperformed. Such a configuration may allow for a tunable plasma to beused in the processes being performed. Unlike a remote plasma unit,which is often presented with on or off functionality, a tunable plasmamay be configured to deliver a specific amount of power to the plasmaregion 215. This in turn may allow development of particular plasmacharacteristics such that precursors may be dissociated in specific waysto enhance the etching profiles produced by these precursors.

A plasma may be ignited either in chamber plasma region 215 aboveshowerhead 225 or substrate processing region 233 below showerhead 225.Plasma may be present in chamber plasma region 215 to produce theradical precursors from an inflow of, for example, a fluorine-containingprecursor or other precursor. An AC voltage typically in the radiofrequency (RF) range may be applied between the conductive top portionof the processing chamber, such as faceplate 217, and showerhead 225and/or ion suppressor 223 to ignite a plasma in chamber plasma region215 during deposition. An RF power supply may generate a high RFfrequency of 13.56 MHz but may also generate other frequencies alone orin combination with the 13.56 MHz frequency.

FIG. 2B shows a detailed view 253 of the features affecting theprocessing gas distribution through faceplate 217. As shown in FIGS. 2Aand 2B, faceplate 217, cooling plate 203, and gas inlet assembly 205intersect to define a gas supply region 258 into which process gases maybe delivered from gas inlet 205. The gases may fill the gas supplyregion 258 and flow to first plasma region 215 through apertures 259 infaceplate 217. The apertures 259 may be configured to direct flow in asubstantially unidirectional manner such that process gases may flowinto processing region 233, but may be partially or fully prevented frombackflow into the gas supply region 258 after traversing the faceplate217.

The gas distribution assemblies such as showerhead 225 for use in theprocessing chamber section 200 may be referred to as dual channelshowerheads (DCSH) and are additionally detailed in the embodimentsdescribed in FIG. 3. The dual channel showerhead may provide for etchingprocesses that allow for separation of etchants outside of theprocessing region 233 to provide limited interaction with chambercomponents and each other prior to being delivered into the processingregion.

The showerhead 225 may comprise an upper plate 214 and a lower plate216. The plates may be coupled with one another to define a volume 218between the plates. The coupling of the plates may be so as to providefirst fluid channels 219 through the upper and lower plates, and secondfluid channels 221 through the lower plate 216. The formed channels maybe configured to provide fluid access from the volume 218 through thelower plate 216 via second fluid channels 221 alone, and the first fluidchannels 219 may be fluidly isolated from the volume 218 between theplates and the second fluid channels 221. The volume 218 may be fluidlyaccessible through a side of the gas distribution assembly 225.

FIG. 3 is a bottom view of a showerhead 325 for use with a processingchamber according to embodiments. Showerhead 325 may correspond with theshowerhead 225 shown in FIG. 2A. Through-holes 365, which show a view offirst fluid channels 219, may have a plurality of shapes andconfigurations in order to control and affect the flow of precursorsthrough the showerhead 225. Small holes 375, which show a view of secondfluid channels 221, may be distributed substantially evenly over thesurface of the showerhead, even amongst the through-holes 365, and mayhelp to provide more even mixing of the precursors as they exit theshowerhead than other configurations.

FIGS. 4A-4C illustrate schematic top plan views of one embodiment of amagnetic induction plasma system 400 which may be used or integrated inthe processing chamber 200 described above. FIG. 4A illustrates themagnetic induction plasma system 400 before a plasma may be generated orignited; FIG. 4B illustrates the magnetic induction plasma system 400during plasma ignition; and FIG. 4C illustrates the magnetic inductionplasma system 400 when a plasma may be sustained by the magneticinduction plasma system 400. With reference to FIG. 4A, the magneticinduction plasma system 400 may include a plasma source or dischargetube 410 characterized by an annular cross-section, and one or moremagnetic elements 420 a, 420 b, 420 c, 420 d positioned around theplasma source 410. The plasma source 410 may be characterized by anannular shape, and may be characterized by a substantially toroidalshape having a toroidal axis 1 (shown as a dot in FIG. 4A) at the centerof the toroidal shape and extending normal to the plane shown as FIG.4A. As also shown in FIG. 4A, additional useful references for ease ofdescription may include a radial direction 2 perpendicular to thetoroidal axis 1, denoting a direction extending radially outward from acentral axis of the plasma source 410, and an azimuthal direction 3,denoting a rotational direction about the toroidal axis 1. A toroidalextension or toroidal direction 4 may be defined as the extension ordirection of the plasma source 410 along which a plasma current may beformed inside the plasma source 410 (as will be described in more detailbelow).

As shown in FIGS. 4D-4F, which schematically illustrate side views ofthe magnetic element 420 before plasma ignition, during plasma ignition,and during plasma maintenance, respectively. The magnetic elements 420may each form a closed loop. The magnetic element 420 may define ahollow center 422 through which a portion of the plasma source 410 mayextend therethrough. The magnetic element 420 may include a magneticbody 424 that may define the closed loop. The magnetic body 424 may beformed of ferrite or other magnetizable materials. As also shown inFIGS. 4D-4F, the magnetic induction plasma system 400 may furtherinclude a coil 430 (not shown in FIGS. 4A-4C) wrapped around at least aportion of the magnetic body 424 of each magnetic element 420.Electrical energy may be supplied to each coil 430 for generating aplasma inside the plasma source 410. Specifically, the electrical energysupplied to the coils 430 may generate a magnetic field inside eachmagnetic element 420, which may in turn induce an electric field E asshown in FIGS. 4A and 4D.

The plasma source 410 may be formed of non-conductive materials ormaterials with very low or little conductivity, such as dielectricmaterials, including, but not limited to, ceramic, quartz, sapphire,etc. In some embodiments, the plasma source 410 may be formed ofconductive materials, such as metals, including, but not limited to,aluminum, stainless steel, etc., and the magnetic induction plasmasystem 400 may further include one or more dielectric sections ordielectric breaks 440 forming a section or sections of the plasma source410. With either configuration, the plasma source 410 may not form aclosed conductive body, and the induced electric field E may increase toa threshold value to ignite or ionize a gas or gas mixture that may besupplied into the plasma source 410, as shown in FIGS. 4B and 4E, toform a plasma. Once the plasma may be ignited, at least a portion of theionized or charged plasma products may circulate inside the plasmasource 410 forming a close-looped current 450, as shown in FIGS. 4C and4F. The coils 430 and the plasma current 450 may then operate in amanner similar to how a primary coil and a secondary coil of atransformer may operate. As electrical energy may be supplied to thecoils 430 continuously, the supplied electric energy may be transferredto the plasma current 450, and a stable plasma may be sustained.

With reference to FIG. 4D, the magnetic body 424 may include an outersurface 426 and an inner surface 428 each of which may include a squareshaped cross section. In some embodiments, the outer surface 426 and theinner surface 428 may include other polygonal shaped cross sections,circular, or oval cross sections, etc. Magnetic bodies 424 with circularor oval cross sections may contain substantially all the magnetic fluxgenerated inside the magnetic body 424 and limit or prevent leakageflux, thereby improving the efficiency of the magnetic induction plasmasystem 400, whereas the magnetic flux generated by the coils 430 mayescape or leak at the corners of the magnetic bodies 424 with polygonalcross sections. Nevertheless, the magnetic bodies 424 forming closedloops may generally offer higher efficiency for the magnetic inductionplasma system 400 as compared to open magnetic bodies that do not formclosed loops because magnetic flux may not form a closed loop and mayescape without inducing an electrical field for generating plasma.

Although not shown in FIGS. 4A-4F, the plasma source 410 may includecross-sectional shapes similar to or different from those of themagnetic element 420. In some embodiments, the plasma source 410 mayinclude inner and outer surfaces that may include square or otherpolygonal cross sections. In some embodiments, the plasma source 410 mayinclude inner and outer surfaces that may include circular or oval crosssections, and the plasma source 410 may be formed as a circular tube.

The magnetic elements 420 may be positioned around the plasma source 410at various locations or azimuthal angles. FIGS. 4A-4C illustrate thatthe magnetic induction plasma system 400 may include four magneticelements 420. The magnetic induction plasma system 400 may include moreor less than four magnetic elements 420, but may include at least onemagnetic element 420. The magnetic elements 420 may be positioned alongthe toroidal extension of the plasma source 410 at an equal distancefrom each other such that the azimuthal angle between any two adjacentmagnetic elements 420 may be the same. For example, in the embodimentshown in FIGS. 4A-4C, the magnetic induction plasma system 400 mayinclude four magnetic elements 420, and any two adjacent magneticelements 420 may be positioned apart from each other by an azimuthalangle of about 90 degrees or by a distance of about a quarter of thetoroidal extension of the plasma source 410.

Depending on the number of magnetic elements 420 the magnetic inductionplasma system 400 may include, the azimuthal angle between any twoadjacent magnetic elements 420 may be greater or less than 90 degrees,and the distance between any two adjacent magnetic elements 420 may begreater or less than a quarter of the toroidal extension of the plasmasource 410. Although FIGS. 4A-4C illustrates that the magnetic elements420 may be spaced apart at an equal distance or equal azimuthal angle,in some embodiments, the magnetic elements 420 may be spaced apart at anon-equal distance or non-equal azimuthal angle. In other words, thedistance between two adjacent magnetic elements 420 along the toroidalextension of the plasma source 410 or the azimuthal angle between thetwo adjacent magnetic elements 420 may be different from the distance orazimuthal angle between another two adjacent magnetic elements 420.However, positioning the magnetic elements 420 at an equal distance orazimuthal angle may improve the uniformity of the plasma productsgenerated inside the plasma source 410. Accordingly, in someembodiments, regardless of the number of magnetic elements 420 included,the magnetic elements may be equidistantly spaced about the plasmasource 410.

Although only one dielectric section 440 is shown in FIGS. 4A-4C, themagnetic induction plasma system 400 may include more than onedielectric section 440. In some embodiments, the magnetic inductionplasma system 400 may include the same number of dielectric sections 440as magnetic elements 420. The multiple dielectric sections 440 may bepositioned at an equal distance or non-equal distances along thetoroidal extension of the plasma source 410. In some embodiments, themagnetic induction plasma system 400 may include more dielectricsections 440 than magnetic elements 420. In the embodiment shown inFIGS. 4A-4C, each of the magnetic elements 420 may be positioned at adifferent azimuthal angle from the dielectric section 440. In someembodiments, at least one of the magnetic elements 420 may be positionedat the same azimuthal angle, or aligned, with the dielectric section440. In the embodiments where the magnetic induction plasma system 400may include an equal number of magnetic elements 420 and dielectricsections 440, each magnetic element 420 may be aligned with a dielectricsection 440.

FIG. 5A schematically illustrates a perspective view of an embodiment ofa magnetic induction plasma system 500 which may be used or integratedin the processing chamber 200 described above. The magnetic inductionplasma system 500 may include a plasma source 510 defining asubstantially toroidal shape. Although not shown in FIG. 5A, similarreferences including toroidal axis, radial direction, azimuthaldirection, and toroidal extension or direction as shown in FIG. 4A, maybe used for description of the embodiment shown in FIG. 5A. Differentfrom the plasma source 410 shown in FIGS. 4A-4C, which may include auniform or consistent width dimension along the toroidal extension withthe width dimension being measured along the radial direction and auniform and consistent height dimension measured parallel to thetoroidal axis, the plasma source 510 may include varying widthdimensions and/or varying height dimensions along the toroidalextension. Specifically, the plasma source 510 may include one or morefirst sections 515 which may be or include metal sections and one ormore second sections 540 which may be or may include dielectric sectionsor dielectric breaks. The first sections 515 and the second sections 540may be arranged in an alternating manner such that the first sections515 may be electrically isolated or insulated from each other by thesecond sections 540. The first sections 515 and the second sections 540may include different width and height dimensions from each other.

As shown in FIG. 5A, the first sections 515 may each include a firstwidth dimension, and the second sections 540 may each include a secondwidth dimension that may be less than the first width dimension. Thefirst sections 515 may each further include a first height dimension,and the second section 540 may each further include a second heightdimension that may be less than the first height dimension. Accordingly,the second sections 540 may define one or more annular recesses, each ofwhich may be configured to receive therein at least a portion of amagnetic element 520, as shown in FIG. 5B, which illustrates a crosssectional view of the second section 540 viewed along line 5B-5B of FIG.5A. Each second section 540 may further include a pair of flanges 542 a,542 b (shown in FIG. 5A) at opposite ends of each second section 540.The flanges 542 may be configured to couple each second section 540 withtwo adjacent first sections 515. For example, each of the first sections515 may be configured with inward lips or flanges at the opposite ends.The flanges 542 of the second sections 540 and the inward lips orflanges of the first sections 515 may be coupled with each other viabolts, screws, glue, adhesive, welding, brazing, and any suitablebonding or coupling mechanism.

As shown in FIGS. 5A and 5B, the second sections 540 may each be formedas a cylindrical body. The magnetic elements 520 may also each be formedas a cylindrical body, which may be positioned concentrically with thesecond section 540. In some embodiments, the second sections 540 and/orthe magnetic elements 520 may be formed with cross-sectional shapes thatmay be polygonal. As discussed above, circular or oval shaped magneticelements 520 may limit magnetic flux leakage, thereby improving theefficiency of the magnetic induction plasma system 500. Accordingly, themagnetic elements may be characterized by elliptical cross-sections insome embodiments.

FIG. 5C illustrates a cross sectional view of the first section 515viewed along line 5C-5C of FIG. 5A. As shown in FIG. 5C, the firstsections 515 may each include a rectangular or square cross section. Thefirst sections 515 may each include a first wall or inner wall 512, asecond wall or outer wall 514, a third wall or upper wall 516, and afourth wall or lower wall 518. The width dimension of each first section515 may be defined by the distance between the outer surfaces of theinner and outer walls 512, 514. The height dimension of each firstsection 515 may be defined by the distance between the outer surfaces ofthe upper and lower walls 516, 518.

In some embodiments, at least the height dimension of each first section515 may be configured to be greater than or about the outer diameter ofeach magnetic element 520 such that when the magnetic elements 520 maybe positioned around the second sections 540 and at least partiallyreceived within the annular recesses defined by the second sections 540,the magnetic element 520 may not extend above the upper wall 516 orbelow the lower wall 518 of the first section 515. With thisconfiguration, when the magnetic induction plasma system 500 may beintegrated in the chamber system 200, the upper walls 516 and the lowerwalls 518 of the first sections 515 may provide support or load-bearingsurfaces for supporting other chamber components and/or the magneticinduction plasma system 500, while the magnetic elements 520 may notcontact or bear the weight of adjacent or nearby chamber components ofthe chamber system 200. Further, because the magnetic elements 520 maynot extend beyond the upper and lower walls 516, 518, the upper-most andthe lower-most surface profiles of the magnetic induction plasma system500 may be substantially defined by the upper and lower walls 516, 518,respectively, which may be substantially flat. This profile may improvethe compatibility of the magnetic induction plasma system 500 with thechamber system 200 given that several components may include aplate-like structure or planar surface, such as the faceplate 217, theion suppressor 223, the showerhead 225, and so on.

Although not shown in FIG. 5A, the first sections 515 may includeapertures formed in the upper walls 516 for introducing or flowing oneor more precursors into the plasma source 510 for generating a plasmatherein. The first sections 515 may further include apertures formed inthe lower walls 518 for releasing at least portions of the plasmaproducts generated inside the plasma source 510. In some embodiments,the first sections 515 may not include the upper and lower walls 516,518. The plasma source 510 may be formed in part by the inner and outerwalls 512, 514 and in part by the adjacent plates or surfaces of thechamber components of the chamber system 200.

As can be seen from the description of the embodiments shown in FIGS.4A-4F and FIGS. 5A-5C, the term toroidal or toroidal shape used hereinis not limited to a torus or toroidal shape with uniform or consistentwidth and/or height dimensions along the extension of the toroidalshape. Further, in some embodiments, the toroidal shape may includeconsistent or similar cross sections along the extension of the toroidalshape, such as the embodiments shown in FIGS. 4A-4F, while in someembodiments, the toroidal shape may include varying cross sections alongthe extension of the toroidal shape, such as the embodiments shown inFIGS. 5A-5C. Moreover, in some embodiments, the toroidal extension maydefine a substantially circular shape, such as the toroidal extension ofthe embodiment shown in FIG. 4A, while in some embodiments, the toroidalextension may define a multi-sided shape which may include one or morearcs and one or more substantially straight segments. For example, thefirst sections 515 of the embodiments shown in FIGS. 5A-5C may be orinclude arcuate extensions while the second sections 540 may be orinclude substantially straight extensions. Furthermore, in someembodiments, the plasma source may not include arcuate sections and boththe first and/or second sections may be or include substantiallystraight extensions. Accordingly, the plasma source may include allarcuate sections, all substantially straight sections, or a combinationthereof.

FIG. 6A illustrates select components of an exemplary process chambersystem 600, which may include a magnetic induction plasma system 610.The process chamber system 600 may further include a gas inlet assembly605 and a faceplate 617 positioned upstream of the magnetic inductionplasma system 610 and a gas distribution component 615 positioneddownstream of the magnetic induction plasma system 610. The processchamber system 600 may include additional components downstream of thegas distribution component 615 similar to those described with referenceto FIG. 2A, such as one or more gas distribution components, variouscomponents defining a substrate processing region, a substrate support,and so on, which are not illustrated in FIG. 6A, but will be readilyappreciated to be encompassed within a chamber incorporating thecomponents illustrated.

During film etching, deposition, and/or other semiconductor processes,one or more precursors may be flowed through the gas inlet assembly 605into a gas supply region 658. The precursors may include any gas orfluid that may be useful for semiconductor processing, including, butnot limited to, process gases, treatment gases, carrier gases, or anysuitable gas or gas mixtures for semiconductor processing. The faceplate617 may facilitate uniform distribution of the precursors from the gassupply region 658 into the magnetic induction plasma system 610. Similarto the faceplate 217 described above with reference to FIGS. 2A and 2B,the faceplate 617 may include apertures 659 configured to direct flow ina substantially unidirectional manner such that the precursors may flowinto the magnetic induction plasma system 610, but may be partially orfully prevented from backflow into the gas supply region 658 aftertraversing the faceplate 617. As shown in FIG. 6A, the magneticinduction plasma system 610 may define one or more flow passages 612that may be aligned with or intersect only portions or select areas orregions of the faceplate 617. Accordingly, in some embodiments, theapertures 659 may be formed only in select areas of the faceplate 617corresponding to the defined flow passages 612, as shown in FIG. 6A.

In some embodiments, the apertures 659 may be formed outside the selectareas, such as across or throughout a central area or substantially theentire surface area of the faceplate 617. To direct the flow of theprecursors into the magnetic induction plasma system 610 or to limit orprevent the flow of the precursors outside the magnetic induction plasmasystem 610, the process chamber 600 may optionally include anintermediate plate 614. The intermediate plate 614 may be positioned inan abutting relationship with the faceplate 617 downstream of thefaceplate 617 to prevent or block the flow of the precursors through theapertures 659 formed outside the select areas. The intermediate plate614 may include one or more cutouts 616 that may be aligned with theopenings of the flow passages 612 defined by the magnetic inductionplasma system 610 to allow the precursors to flow into the magneticinduction plasma system 610. In some embodiments, intermediate plate 614may facilitate retrofit operations with faceplate designs that define amore uniform distribution of apertures across the component, althoughintermediate plate 614 may be omitted in some embodiments.

Although a single plate is illustrated in FIG. 6A, the gas distributioncomponent 615 may include one or more plates that may controldistribution of the plasma products generated inside the magneticinduction plasma system 610 downstream into the substrate processingregion. In some embodiments, the gas distribution component 615 mayinclude an ion suppressor, similar to the ion suppressor 223 describedabove with reference to FIG. 2, configured to control the passage of theactivated gas from the magnetic induction plasma system 610. Theactivated gas may include ionic, radical, and/or neutral species, whichmay also be collectively referred to as plasma products. Similar to theion suppressor 223, the ion suppressor of the gas distribution component615 may include a perforated plate with a variety of apertureconfigurations to control or suppress the migration of charged particlesor species out of the magnetic induction plasma system 610 whileallowing uncharged neutral or radical species to pass through the ionsuppressor. In some embodiments, the gas distribution component 615 mayfurther include a gas distribution assembly or showerhead, similar tothe gas distribution assembly or dual channel showerhead 225 describedabove with reference to FIG. 2. The showerhead of the gas distributioncomponent 615 may allow for separation of various precursors outside ofthe substrate processing region prior to being delivered into theprocessing region while facilitating even mixing of the precursors asthey exit the showerhead.

Although both an ion suppressor and a showerhead are described herein asexemplary parts that the gas distribution component 615 may include, insome embodiments, the gas distribution component 615 may include onlyone of the ion suppressor or the showerhead but not the other, or maynot include either of the ion suppressor or the showerhead. In someembodiments, the gas distribution component 615 may include othersuitable plates or gas distribution control mechanisms. In someembodiments, the gas distribution component 615 may not include any gasdistribution control mechanism. In some embodiments, the process chambersystem 600 may not include the gas distribution component 615 at all. Inother words, the plasma generated inside the magnetic induction plasmasystem 610 may be distributed directly into the substrate processingregion without passing through any distribution control or filteringmechanism.

With reference to FIGS. 6B and 6C, the magnetic induction plasma system610 will be described in more detail. FIG. 6B shows a top perspectiveview of the magnetic induction plasma system 610, and FIG. 6C shows across sectional view of the magnetic induction plasma system 610 viewedalong line 6C-6C in FIG. 6B. Although not shown in FIGS. 6B and 6C,similar references including toroidal axis, radial direction, azimuthaldirection, and toroidal extension or direction as shown in FIG. 4A, maybe used for description of the embodiment shown in FIGS. 6B and 6C. Onedifference between the embodiments shown in FIGS. 6B and 6C and theembodiments shown in FIGS. 4A-5C may include that the magnetic inductionplasma system 610 may include two plasma sources: a first plasma source620 and a second plasma source 630. In some embodiments, first plasmasource 620 may be, or include any of the characteristics of, thepreviously described sources, and may incorporate second plasma source630 within an inner annular radius of the first plasma source 620. Thefirst plasma source 620 and the second plasma source 630 may define twotoroidal shapes having a common center and a common toroidal axis. Thesecond plasma source 630 may be positioned radially inward from thefirst plasma source 620. Accordingly, the first plasma source 620 mayalso be referred to as the outer plasma source 620, and the secondplasma source 630 may also be referred to as the inner plasma source630.

With reference to FIG. 6B, each of the first and second plasma sources620, 630 may include multiple sections. The first plasma source 620 mayinclude one or more first section 622, which may be or includeconductive sections, and one or more second sections 624, which may beor may include dielectric sections or dielectric breaks, arranged in analternating manner such that the first sections 622 may be electricallyisolated or insulated from each other by the second sections 624. Thefirst sections 622 and the second sections 624 may be fluidly coupledwith each other to define a first plasma circulation channel. At least aportion of ionized or charged species of the plasma products maycirculate inside the first plasma circulation channel and may passthrough at least a portion or portions of the first sections 622 and/ora portion or portions of the second section 624 along the toroidalextension of the first plasma source 620.

Similarly, the second plasma source 630 may include one or more thirdsections 632, which may be or may include conductive sections, and oneor more fourth sections 634, which may be or may include dielectricsections or dielectric breaks, arranged in an alternating manner suchthat the third sections 632 may be electrically isolated or insulatedfrom each other by the fourth sections 634. The third sections 632 andthe fourth sections 634 may be fluidly coupled with each other to definea second plasma circulation channel. At least a portion of the ionizedor other charged species of the plasma products generated inside thesecond plasma source 630 may circulate through at least a portion orportions of the third sections 632 and/or a portion or portions of thefourth section 634 along the toroidal extension of the second plasmasource 630.

In the embodiments shown in FIG. 6B, the first plasma source 620 mayinclude four first sections 622 and four second sections 624, and thesecond plasma source 630 may include two third sections 632 and twofourth sections 634. Although four first sections 622 and four secondsections 624 are shown for the first plasma source 620, the first plasmasource 620 may include more or fewer of the first sections 622 and/orthe second sections 624. Similarly, although two third sections 632 andtwo fourth sections 634 are shown for the second plasma source 630, thesecond plasma source 630 may include more or fewer of the third sections632 and/or the fourth sections 634.

The four second sections 624 of the first plasma source 620 may bepositioned at an equal distance from each other along the toroidalextension of the first plasma source 620 and may be positioned apartfrom each other by an azimuthal angle of about 90 degrees. The twofourth sections 634 of the second plasma source 630 may also bepositioned at an equal distance from each other along the toroidalextension of the second plasma source 630 and may be positioned apartfrom each other by an azimuthal angle of about 180 degrees.Additionally, each of the fourth sections 634 of the second plasmasource 630 may be positioned at an azimuthal angle different from eachof the second sections 624 of the first plasma source 620. The fourthsections 634 of the second plasma source 630 may be positioned at anazimuthal angle different from the azimuthal angles of the two nearbysecond sections 624 of the first plasma source 620 by about 45 degrees,or any other suitable angle. Positioning the second sections 624 of thefirst plasma source 620 and the fourth sections 634 of the second plasmasource 630 at different azimuthal angles may limit interference orarcing issues between the first sections 622 of the first plasma source620 and the third sections 632 of the second plasma source 630,especially when high voltages may be applied during the plasma ignitionperiod.

The extension of each first section 622 and the extension of each thirdsection 632 along the toroidal extension of the respective first andsecond plasma sources 620, 630 may be characterized by an arcuate shape,while the extension of each second section 624 and the extension of eachfourth section 634 may be substantially straight. With respect to thefirst plasma source 620, a ratio of the extension of each first section622 to the extension of each second section 624 may be greater than orabout 1.5:1, 2:1, 2.5:1, 3:1, 3.5:1, 4:1, 4.5:1, 5:1, 6:1, 7:1, 8:1,9:1, 10:1, or greater. With respect to the second plasma source 630, aratio of the extension of each third section 632 to the extension ofeach fourth section 634 may be greater than or about 1.5:1, 2:1, 2.5:1,3:1, 3.5:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, or greater. The greaterthe ratio of the extension of the arcuate first sections 622 to thesubstantially straight second sections 624, or the greater the ratio ofthe extension of the arcuate third sections 632 to the substantiallystraight fourth sections 634, the closer the circulation channel insidethe first and second plasma sources 620, 630 for the plasma current mayresemble a circle to facilitate the circulation of the plasma current,and the more stable and uniform the plasma generated therein may be.However, the extension of the second and/or fourth sections 624, 634 maybe maintained above at least a threshold value such that potential arcfaults between the first and/or third sections 622, 632 coupled witheither side of a second or fourth section 624, 634 or other arcingissues that may be caused by the high voltage especially during plasmaignition may be limited or eliminated.

Similar to the second sections 540 of the plasma source 510 shown inFIGS. 5A and 5B, each of the second and/or fourth sections 624, 634 maydefine an annular recess for receiving therein at least a portion of amagnetic element (not shown in FIGS. 6B and 6C). As discussed above, theannular recesses may be configured such that when the magnetic elementsmay be received therein, the magnetic elements may not contact the upperand lower chamber components when the magnetic induction plasma system610 may be integrated in the chamber system 600. Coils may be wrappedaround at least a portion of each magnetic element. Electrical energymay be supplied to the coils for generating a plasma inside each of thefirst plasma source 620 and the second plasma source 630. Once theplasma may be generated inside the first and second plasma sources 620,630, at least a portion of the ionized or charged species of the plasmaproducts may circulate inside the first and second plasma channels underthe induced electric field along the toroidal extension of the first andsecond plasma sources 620, 630, while the neutral or radicals species ofthe products, as well as a portion of the ionized or charged species,may flow through the flow passages 612 into the substrate processingregion.

With reference to FIG. 6B and using the first sections 622 and thesecond sections 624 of the first plasma source 620 as an example, thecoupling between the first sections 622 and the second sections 624 andthe coupling between the third sections 632 and the fourth sections 634will be described in more detail. Each of the second sections 624 mayinclude a hollow cylindrical body 640 oriented along the toroidalextension of the first plasma source 620 and two flanges 642 a, 642 bconfigured at the opposite ends of the hollow cylindrical body 640. Eachof the first sections 622 may include an arcuate tubular body 644extending parallel to the toroidal axis of the first plasma source 620.The arcuate tubular body 644 may define one or more of the flow passages612 described above with reference to FIG. 6A. The flow passages 612 mayinclude a substantially consistent width dimension. Accordingly, theopening of each first section 622 for the precursors to flow into thefirst plasma source 620 and the opening of each first section 622 forreleasing the plasma products generated may include substantially thesame width dimensions as the arcuate tubular body 644, with the widthdimensions measured along the radial direction.

The first section 622 may include an arcuate first or inner wall 646, anarcuate second or outer wall 648, and two sidewalls 650 (only onelabeled in FIG. 6B) connecting the ends of the inner wall 646 and theouter wall 648. The inner wall 646, outer wall 648, and sidewalls 650together may form the tubular body 644. Each of the sidewalls 650 mayinclude an aperture 652 formed therethrough that may be aligned with thehollow centers of the cylindrical bodies 640 of the adjacent secondsections 624 such that fluid communication between the first sections622 and the second sections 624 may be established. In some embodiments,the sidewalls 650 of the first section 622 may include flanged oroutwardly tapered portions 654 to provide sufficient surface area forcoupling with the flanges 642 of the second sections 624. The sidewalls650 of the first section 622 and the flanges 642 of the second sections624 may be coupled with each other via bolts, screws, glue, adhesive,welding, brazing, and any suitable bonding or coupling mechanism. Toprevent gas leakage, the exterior surface of each sidewall 650 may beformed with an annular recess 656 (shown in FIG. 6C) for receiving asealing ring, such as an O-ring or any other suitable sealing elements,which may be pressed against the flanges 642 to create a sealtherebetween when the first sections 622 and the second sections 624 maybe coupled with each other.

With reference to FIG. 6C, each of the first sections 622 may include aninner width dimension which may be defined as the distance between theinner surfaces of the inner wall 646 and the outer wall 648 along theradial direction. Each of the second sections 624 may include an innerdiameter which may be defined as the inner diameter of the cylindricalbody 640. The inner width dimension of each first section 622 may besubstantially the same or similar to the inner diameter of each secondsection 624 such that the flow of the ionized or charged species of theplasma products inside the first plasma source 620 may be facilitated tomaintain the plasma generated therein. Each of the first sections 622may include a height dimension which may be defined as the extension ofthe first sections 622 parallel to the toroidal axis. The heightdimension of each first section 622 may be similar to or greater thanthe inner width dimension of each first section 622 or the innerdiameter of each second sections 624. A ratio of the height dimension ofeach first section 622 to the inner width dimension thereof or to theinner diameter of each second section 624 may be greater than or about1:1, 1.5:1, 2:1, 2.5:1 3:1, or greater. Each of the third sections 632of the second plasma source 630 may be configured with an inner widthdimension and a height dimension the same as or similar to those of thefirst sections 622 of the first plasma source 620, and the fourthsections 634 of the second plasma source 630 may be configured with aninner diameter the same as or similar to the inner diameter of thesecond sections 624 of the first plasma source 620. Consequently, theheight dimension of each third section 632 may be similar to or greaterthan the inner width dimension of each third section 632 or the innerdiameter of each fourth sections 634 of the second plasma source 630. Aratio of the height dimension of each third section 632 to the innerwidth dimension thereof or to the inner diameter of each fourth section634 may be greater than or about 1:1, 1.5:1, 2:1, 2.5:1 3:1, or greater.

Configuring the height dimension of each first and/or third sections622, 632 greater than the inner width dimension thereof, and thusgreater than the inner diameter of each second and/or fourth sections624, 634, may not only create the annular recesses around the secondand/or fourth sections 624, 634 for receiving the magnetic elementstherein, but may also help to sustain the plasma current circulatingthrough the cylindrical bodies 640 and the first and third sections 622,632 along the toroidal extension of the first and second plasma sources620, 630. This may be partly because the plasma current, as well as theelectrical field driving the current, may be maintained at a distanceaway from the faceplate 617 above, and at a distance away from the gasdistribution component 615 below, each of which may be constructed ofmetals and may affect the plasma current flow or the electrical field.

In some embodiments, the magnetic induction plasma system 610 mayfurther include dielectric ring members 660 a, 660 b (see FIG. 6B)coupled to the opposite, e.g., top and bottom, rims of the arcuatetubular bodies 644. The dielectric ring members 660 a, 660 b mayelectrically isolate or insulate the first and third sections 622, 632from other metal chamber components adjacent the magnetic inductionplasma system 610 when the magnetic induction plasma system 610 may beincorporated to the chamber system 600. The dielectric ring members 660a, 660 b may further electrically isolate or insulate the first sections622 from each other and may insulate the third sections 632 from eachother when the magnetic induction plasma system 610 may be incorporatedto the chamber system 600 and may contact the other metal components ofthe chamber system 600. The dielectric ring members 660 a coupled to thetop of the arcuate tubular bodies 644 may define a first planarsupporting surface and may be configured to support at least one of thegas inlet assembly 605 or the faceplate 617 at the first planarsupporting surface when the magnetic induction plasma system 610 may beincorporated into the chamber system 600. The dielectric ring members660 b coupled to the bottom of the arcuate tubular bodies 644 may definea second planar supporting surface, and the magnetic induction plasmasystem 610 may be supported by the gas distribution component 615 at thesecond planar supporting surface.

With further reference to FIGS. 6B and 6C, the first plasma source 620may include one or more monitoring windows or apertures 662 configuredat the outer walls 648 of the first sections 622. Although not shown,the second plasma source 630 may also include one or more monitoringwindows or apertures configured at the walls of the third sections 632.Optical, electrical, chemical, or other suitable probes or monitoringmechanisms may be coupled to the monitoring window 662 for monitoringthe properties of the plasma generated inside the first and secondplasma sources 620, 630. The data collected by the monitoring mechanismmay be utilized to set up a closed-loop or feedback control foradjusting automatically the power, current, etc., supplied to the coilsto generate a stable plasma with desired properties and/or compositionof the plasma products generated.

FIGS. 7A-7C show schematic views of an exemplary plasma system inoperation according to embodiments of the present technology. FIG. 7Aschematically illustrates a top view of a process chamber system 700incorporating a magnetic induction plasma system 710 similar to thatdescribed above with reference to FIG. 5. FIG. 7B schematicallyillustrates a cross sectional view of a process chamber system 700 bincorporating a magnetic induction plasma system 710 b as a directplasma source. FIG. 7C schematically illustrates a cross sectional viewof a process chamber system 700 c incorporating a magnetic inductionplasma system 710 as a remote plasma source.

With reference to FIG. 7B, the magnetic induction plasma system 710 bmay be positioned directly above the substrate processing region 720within which a substrate may be supported by a pedestal 730. One or moreprecursors may be flowed into the magnetic induction plasma system 710 bvia a gas inlet assembly 705. A power source 715 may be coupled with themagnetic induction plasma system 710 b for supplying electrical energyto the magnetic induction plasma system 710 b for generating a plasmafrom the precursors. The magnetic induction plasma system 710 b mayinclude a plasma source that may be configured with an open bottom suchthat the plasma products, including ionic, radical, and/or neutralspecies, as well as any carrier gases, may be flowed directly onto thesubstrate to be processed. The plasma products exiting the magneticinduction plasma system 710 b may diffuse into a cone shaped volume suchthat by the time the plasma products may reach the pedestal 730, theplasma products may be diffused onto the entire surface area of thesubstrate to be processed.

Depending on the distance between the magnetic induction plasma system710 b and the pedestal 730, the size of the substrate to be processed,and other factors, the magnetic induction plasma system 710 b may beconfigured with a proper width dimension such that full coverage of thesubstrate to be processed by the plasma products may be ensured andwaste of precursors for generating the plasma products may be minimized.As discussed above, the width dimension may be defined as the distancebetween the inner surfaces of the inner and outer walls, denoted as W inFIG. 7A. In some embodiments, the width dimension may be greater than orabout 10% of the radius of the process chamber 700, denoted as R in FIG.7A. In some embodiments, the width dimension may be greater than orabout 20%, 30%, 40%, 50%, 60%, 70%, 80%, or more of the radius R of theprocess chamber 700.

With reference to FIG. 7C, the magnetic induction plasma system 710 cmay be integrated into the chamber system 700 c as a remote plasmasource. The chamber system 700 c may include an ion suppressor 740configured to control the passage of the plasma products generated.Similar to the ion suppressor 223 discussed above with reference to FIG.2, the ion suppressor 740 may include a perforated plate with a varietyof aperture configurations to control or suppress the migration ofcharged particles or species out of the magnetic induction plasma system710 c while allowing uncharged neutral or radical species to passthrough the ion suppressor 740. The chamber system 700 may furtherinclude a gas distribution assembly or showerhead 750, similar to thegas distribution assembly or dual channel showerhead 225 described abovewith reference to FIG. 2. The showerhead 750 may facilitate evendistribution of the neutral or radical species into the processingregion 720 and onto the substrate to be processed. In some embodiments,the showerhead 750 may further allow for separation of variousprecursors outside of the substrate processing region 720 prior to beingdelivered into the processing region while facilitating even mixing ofthe precursors as they exit the showerhead 750. Given that the ionsuppressor 740 and/or the showerhead 750 may facilitate evendistribution of select plasma products into the processing region 720and onto the substrate, the magnetic induction plasma system 710 c mayinclude a width dimension that may be similar to or less than the widthdimension of the magnetic induction plasma system 710 b when configuredas a direct plasma source. In various embodiments, the width dimensionof the magnetic induction plasma system 710 c may be greater than orabout 20%, 30%, 40%, 50%, 60%, 70%, 80%, or more of the radius R of theprocess chamber 700.

FIGS. 8A-8C show schematic views of an exemplary plasma system inoperation according to embodiments of the present technology. FIG. 8Aschematically illustrates a top view of a process chamber system 800incorporating a magnetic induction plasma system 810 similar to themagnetic induction plasma system 610 described above with reference toFIG. 6. FIG. 8B schematically illustrates a cross sectional view of aprocess chamber system 800 b incorporating a magnetic induction plasmasystem 810 b as a direct plasma source. FIG. 8C schematicallyillustrates a cross sectional view of a process chamber system 800 cincorporating a magnetic induction plasma system 810 c as a remoteplasma source.

The configuration of the process chamber systems 800 b, 800 c may besimilar to those of the process chamber systems 700 b, 700 c,respectively, except that the magnetic induction plasma system 810 b,810 c may each include two toroidal shaped plasma sources: an innerplasma source 812 and an outer plasma source 814. The plasma productsgenerated by the inner plasma sources 812 b, 812 c may be flowed onto acircular central region of the substrate to be processed, and the plasmaproducts generated by the outer plasma sources 814 b, 814 c may beflowed onto an annular or outer region of the substrate surrounding andoverlapping with at least a peripheral portion of the central region.

To ensure full coverage of the substrate by the plasma products releasedfrom the inner and outer plasma sources 812, 814, the width dimensionsof the inner and outer plasma sources 812, 814 may each be greater thanor about 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, or greater of theradius of the process chamber 800. In the embodiment of FIG. 8C, becausethe ion suppressor 840 and/or the showerhead 850 may facilitate evendistribution of the plasma products onto the substrate, the widthdimensions of the inner and outer plasma sources 812 c, 814 c may beless than the width dimensions of the inner and outer plasma sources 812b, 814 b of the embodiment of FIG. 8B. While the plasma sources 812, 814may be configured with greater width dimensions to ensure full coverageof the substrate by the plasma products, the width dimensions may bekept under certain values such that the interference between themagnetic fields generated by the plasma currents inside the inner andouter plasma sources 812, 814 may be minimized. To further limit suchinterference, a sufficient distance between the inner and outer plasmasources 812, 814 may also be maintained. In some embodiments, the innerand outer plasma sources 812, 814 may each be configured with a widthdimension between about 10% and about 30% of the radius of the processchamber 800. The distance between the inner and outer plasma sources812, 814 may be maintained at about 50% or more of the width dimensionof the plasma sources 812, 814. Although the inner and outer plasmasources 812, 814 are illustrated to have substantially similar widthdimensions, the inner and outer plasma sources 812, 814 may havedissimilar or different width dimensions.

The various embodiments of the magnetic induction plasma systemsdescribed above may utilize an LLC resonant half bridge circuit drivingscheme. Conventional plasma generating systems may typically utilize afull bridge circuit driving scheme. The LLC resonant half bridge circuitmay generally be more reliable and cost effective as compared to theconventional full bridge circuit for plasma generation. The LLC resonanthalf bridge circuit may yield higher power transfer efficiency for themagnetic induction plasma systems described herein. Compared to aconventional plasma generating system using full bridge circuit drivingscheme, the LLC resonant half bridge circuit driving scheme for themagnetic induction plasma systems may require significantly lower powerto ignite and/or sustain the plasma while yield similar dissociation ofthe precursor gases. For example, the magnetic induction plasma systemas described herein may require a plasma ignition power of about 1,000W, 800 W, 600 W, 400 W, 200 W, or less, and may require a plasmasustaining power of only ½, ⅓, or less of the ignition power. Incontrast, a plasma generating system utilizing full bridge circuitdriving scheme may require 10,000 W or more for plasma ignition and/orsustaining partly due to energy loss on the driving circuitry.

Further, conventional plasma generating systems utilizing a full bridgecircuit driving scheme may allow for limited power adjustment. Themagnetic induction plasma systems utilizing an LLC resonant half bridgecircuit driving scheme may allow for power adjustment from 0 W to about1,000 W or higher. For example, the power may be modulated by adjustingthe driving voltage, current, and/or frequency. Increasing the drivingvoltage and/or the current may increase the power output, whiledecreasing the driving frequency may increase the power output.Generally, higher power output may yield a higher dissociation rate ofthe precursor gases. By adjusting the power output, the dissociationrate of the precursor gases may be modulated to achieve desiredcomposition of the plasma products.

Moreover, in the embodiments where the magnetic induction plasma systemmay include an inner toroidal plasma source and an outer toroidal plasmasource, different levels of power may be supplied to the inner and outertoroidal plasma sources. For example, a relatively higher power, such asabout 300 W to about 1,000 W may be supplied to the outer toroidalplasma source, whereas a relatively lower power, such as about 100 W toabout 600 W may be supplied to the inner toroidal plasma source.Although different levels of power may be supplied to the inner andouter toroidal plasma sources, the driving frequencies for the inner andouter toroidal plasma sources may match such that the induced electricalfields in or near the inner and outer toroidal plasma sources may notcancel each other out.

The magnetic induction plasma systems described herein may operate togenerate a plasma at a wide frequency range from about 50 kHz to about500 MHz. However, a lower frequency may yield higher power transferefficiency because high frequency may lead to power loss in the magneticelements. In some embodiments, the LLC resonant half bridge circuit maysupply a current to the plurality of coils at a frequency between about100 kHz and about 20 MHz, between about 200 kHz and about 10 MHz,between about 400 kHz and about 1 MHz, or any suitable range. Themagnetic induction plasma systems may also operate at a very widepressure range. The operational pressure inside the toroidal plasmasources may be maintained between about 1 mTorr and about 500 Torr, oreven higher pressure. The precursor may be flowed at various flow ratesinto the plasma source such that a pressure within the plasma source maybe maintained between about 1 mTorr and about 500 Torr, or between about10 mTorr and about 300 Torr, or between about 15 mTorr and about 200Torr, or any suitable range. Very stable plasmas may be generated andmaintained by the magnetic induction plasma systems described herein atthe various power levels, frequency ranges, and/or the pressure ranges.This may be in part because once the plasma may be ignited, the coil andthe plasma current may operate in a manner similar to the primary andsecondary coils of a transformer to sustain the plasma generated in astable state.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology. Additionally, methods orprocesses may be described as sequential or in steps, but it is to beunderstood that the operations may be performed concurrently, or indifferent orders than listed.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “a precursor” includes aplurality of such precursors, and reference to “the layer” includesreference to one or more layers and equivalents thereof known to thoseskilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

The invention claimed is:
 1. A magnetic induction plasma system,comprising: a first plasma source including a plurality of firstsections and a plurality of second sections fluidly coupled with eachother such that at least a portion of plasma products generated insidethe first plasma source circulate through at least one of the pluralityof first sections and at least one of the plurality of second sectionsinside the first plasma source, wherein each of the plurality of secondsections comprises a dielectric material, wherein the plurality of firstsections and the plurality of second sections are arranged in analternating manner such that the plurality of first sections areelectrically insulated from each other at least in part by the pluralityof second sections; a plurality of first magnetic elements, wherein eachof the plurality of first magnetic elements defines a closed loop and ispositioned around one of the plurality of second sections; and whereinthe first plasma source defines a first toroidal shape, the firsttoroidal shape having a first toroidal extension and a first toroidalaxis perpendicular to the first toroidal extension, wherein each of theplurality of first sections includes a first dimension parallel to thefirst toroidal axis, wherein each of the plurality of second sectionsincludes a second dimension parallel to the first toroidal axis, whereinthe first dimension is greater than the second dimension such that theplurality of second sections defines a plurality of annular recesses,wherein each of the plurality of annular recesses is configured toreceive one of the plurality of first magnetic elements such that themagnetic induction plasma system is integratable into a semiconductorprocessing chamber having a gas inlet assembly disposed upstream of themagnetic induction plasma system, wherein the plurality of firstsections is configured to support a planar surface of the gas inletassembly, and wherein the plurality of annular recesses is configured toallow the plurality of magnetic elements to be disposed below the planarsurface of the gas inlet assembly without contacting the planar surfaceof the gas inlet assembly.
 2. The magnetic induction plasma system ofclaim 1, wherein each of the plurality of first sections comprises afirst opening and a second opening, wherein each of the plurality offirst sections and the corresponding first and second openings define aflow passage parallel to the first toroidal axis, wherein the firstopening of each of the plurality of first sections is configured toreceive a precursor into the corresponding first section and generatethe plasma products inside the first plasma source, wherein the secondopening of each of the plurality of first sections provides access forthe generated plasma products to flow from the corresponding firstsection.
 3. The magnetic induction plasma system of claim 1, furthercomprising a plurality of first dielectric ring members each positionedat a top rim of one first section of the plurality of first sections anda plurality of second dielectric ring members each positioned at abottom rim of one first section of the plurality of first sections suchthat the plurality of first sections are electrically insulated fromeach other when the magnetic induction plasma system is integrated intothe semiconductor processing chamber and positioned between metalcomponents of the semiconductor processing chamber along the firsttoroidal axis.
 4. The magnetic induction plasma system of claim 3,wherein the semiconductor processing chamber further comprises a gasdistribution assembly, wherein the gas distribution assembly ispositioned downstream of the magnetic induction plasma system, whereinthe plurality of first dielectric ring members defines a first planarsupporting surface and is configured to support the planar surface ofthe gas inlet assembly, and wherein the plurality of second dielectricring members defines a second planar supporting surface and isconfigured to be supported by a planar surface of the gas distributionassembly.
 5. The magnetic induction plasma system of claim 1, whereineach of the plurality of first sections includes an arcuate tubularbody.
 6. The magnetic induction plasma system of claim 1, wherein eachof the plurality of second sections comprises a pair of flangesconfigured at two opposite ends of each second section and configured tocouple each second section with two adjacent first sections.
 7. Themagnetic induction plasma system of claim 1, wherein each of theplurality of first sections includes a first extension along the firsttoroidal extension, wherein each of the plurality of second sectionsincludes a second extension along the first toroidal extension, a ratioof the first extension to the second extension is between about 10:1 andabout 2:1 such that circulation of at least a portion of plasma productsinside the first plasma source is facilitated.
 8. The magnetic inductionplasma system of claim 1, further comprising: a second plasma sourcedefining a second toroidal shape, the second toroidal shape having asecond toroidal extension and a second toroidal axis perpendicular tothe second toroidal extension, the second toroidal axis aligned with thefirst toroidal axis, wherein the second plasma source is positionedradially inward from the first plasma source, the second plasma sourcecomprises a third section and a fourth section, at least one of thethird section or the fourth section comprises a dielectric material; andat least one second magnetic element defining a closed loop andpositioned around at least one of the third section or the fourthsection.
 9. The magnetic induction plasma system of claim 8, wherein theat least one second magnetic element is positioned at an azimuthal angledifferent from an azimuthal angle of each of the plurality of firstmagnetic elements such that interference between an electric fieldgenerated by each of the plurality of first magnetic elements and anelectric field generated by the at least one second magnetic element isreduced.
 10. The magnetic induction plasma system of claim 8, whereinthe first plasma source and the second plasma source are configured suchthat the plasma products exiting the first plasma source diffuses onto afirst region of a substrate, wherein the first region defines asubstantially annular shape, wherein the plasma products exiting thesecond plasma source diffuses onto a second region of the substrate,wherein the second region defines a substantially circular shape, andthe first region and the second region overlap.
 11. The magneticinduction plasma system of claim 8, further comprising: a plurality ofelectrically coupled first coils each being configured around at least aportion of each of the plurality of first magnetic elements; and asecond coil being configured around at least a portion of the at leastone second magnetic element, wherein the magnetic induction plasmasystem is driven by an LLC resonant half bridge circuit, wherein: theLLC resonant half bridge circuit is configured to supply a first currentto the plurality of electrically coupled first coils at a frequency thatmatches a frequency at which the LLC resonant half bridge circuit isconfigured to supply a second current to the second coil.
 12. Themagnetic induction plasma system of claim 11, wherein the LLC resonanthalf bridge circuit is configured to supply the first current and thesecond current at a frequency between about 100 kHz and about 20 MHz.13. The magnetic induction plasma system of claim 11, wherein the LLCresonant half bridge circuit is configured to supply a first power tothe plurality of electrically coupled first coils and to supply a secondpower to the second coil, the first power being greater than the secondpower.
 14. A semiconductor processing chamber, comprising: a magneticinduction plasma system, wherein the magnetic induction plasma systemcomprises: a first plasma source having a first toroidal shape having afirst toroidal axis, the first plasma source defining a first annularrecess of the first toroidal shape; and a first magnetic element forminga closed loop and positioned around a portion of the first plasmasource, at least a portion of the first magnetic element being receivedwithin the first annular recess, wherein: the first plasma sourceincludes a first wall and a second wall at least in part defining a flowpassage parallel to the first toroidal axis, wherein a top rim of thefirst wall and a top rim of the second wall at least in part define afirst opening configured to receive an unexcited precursor into thefirst plasma source configured to generate plasma products therefrom,wherein a bottom rim of the first wall and a bottom rim of the secondwall further at least in part define a second opening providing accessfor the generated plasma products to flow from the first plasma source,wherein the first and second walls define a width of the first plasmasource along a radial direction of the first toroidal shape, wherein thetop rims of the first and second walls define a width of the firstopening along the radial direction of the first toroidal shape, whereinthe bottom rims of the first and second walls define a width of thesecond opening along the radial direction of the first toroidal shape,and wherein the first opening, the second opening, and the first plasmasource are characterized by the same width along the radial direction ofthe first toroidal shape.
 15. The semiconductor processing chamber ofclaim 14, wherein the magnetic induction plasma system furthercomprises: a second plasma source having a second toroidal shape andcoaxially aligned with the first plasma source, the second plasma sourcepositioned radially inward from the first plasma source, the secondplasma source defining a second annular recess of the second toroidalshape; and a second magnetic element forming a closed loop andpositioned around a portion of the second plasma source, at least aportion of the second magnetic element being received within the secondannular recess, wherein: the second plasma source includes a thirdopening configured to receive the unexcited precursor into the secondplasma source configured to generate plasma products therefrom and afourth opening providing access for the generated plasma products toflow from the second plasma source, wherein the third opening, thefourth opening, and the second plasma source are characterized by thesame width measured along a radial direction of the second toroidalshape.
 16. The semiconductor processing chamber of claim 15, wherein thefirst magnetic element is positioned at a first azimuthal angle, and thesecond magnetic element is positioned at a second azimuthal angledifferent from the first azimuthal angle.
 17. The semiconductorprocessing chamber of claim 14, further comprises a gas inlet assemblyhaving a planar surface and disposed upstream of the magnetic inductionplasma system, wherein the magnetic induction plasma system isconfigured to support the planar surface of the gas inlet assembly. 18.The semiconductor processing chamber of claim 17, wherein the gas inletassembly comprises a first gas delivery member and a second gas deliverymember, wherein the second gas delivery member defines the planarsurface of the gas inlet assembly to be supported by the magneticinduction plasma system, wherein the first gas delivery member comprisesa first flange surrounding a protruding portion of the first gasdelivery member, wherein the second gas delivery member comprises asecond flange surrounding a recess defined by the second gas deliverymember, wherein the recess is configured to receive the protrudingportion, wherein the second flange is configured to support the firstflange to define a gas supply region between the first gas deliverymember and the second gas delivery member when the protruding portion isreceived in the recess, and wherein the gas supply region provides fluidaccess to the first plasma source for the unexcited precursor.
 19. Thesemiconductor processing chamber of claim 14, further comprises a gasdistribution assembly having a planar surface and disposed downstream ofthe magnetic induction plasma system, wherein the magnetic inductionplasma system is configured to be supported by the planar surface of thegas distribution assembly.
 20. The semiconductor processing chamber ofclaim 19, further comprises a dielectric ring member positioned at thebottom rims of the first and second walls and contacting the planarsurface of the gas distribution assembly.